Element14 has expanded its portfolio of transistors from NXP Semiconductors, a world leader in high-performance mixed signal electronics, with the addition of the industry’s first bipolar transistors in LFPAK56(Power SO-8). These transistors in low-profile LFPAK56 (SOT669) SMD power plastic package, deliver thermal and electrical performance comparable to bipolar transistors in much larger power packages such as DPAK, on less than half the footprint.
element14 introduces first bipolar transistors
These high power bipolar transistors, housed in LFPAK56 (Power-SO8) packages, deliver DPAK-like thermal and electrical performance in just half the footprint. Offering reliable, energy-efficient performance, they are AEC-Q101 qualified and support high temperature operation, up to 175 °C. These transistors in low profile LFPAK56 (SOT669) SMD power plastic package, deliver thermal and electrical performance comparable to bipolar transistors in much larger power packages such as DAPK, on less than half the footprint.
Features and benefits –
- 26 types up to 100 V and 15 A in single and double configurations.
- High power dissipation Ptotal
- Suitable for high-temperature applications; up to 175 °C
- Space-saving: 5 x 6 mm package outline is half the size of equivalent transistors in DPAK, SOT223 and other packages
- Low profile of 1 mm
- High reliability and mechanical ruggedness thanks to solid-copper clip, no wires
- High energy efficiency due to less heat generation
- AEC-Q101 qualified
- Future-proof, growing portfolio
“We believe that NXP’s LFPAK will become the standard in compact power packages for bipolar transistors – just as NXP LFPAK is the industry benchmark for MOSFETs today,” said Joachim Stange, product manager, transistors, NXP Semiconductors. The double transistors in LFPAK56D and high current single types with 6, 10 and 15 A will be released from Q2 2014 onward. This innovation will help them to get the advanced version and little improvements are made to this for greater results.
This article is written by : Srikanth Kulkarni